PART |
Description |
Maker |
3N206 3N204 3N205 |
Silicon dual insulated-gate field-effect transistor. Silicon Dual Insulated-Gate Field-Effect Transistors
|
General Electric Solid State GESS[GE Solid State]
|
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
ETC[ETC]
|
GT50J121 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT20J101 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|